| PART |
Description |
Maker |
| BA1283-GS08 |
DIODE SILICON, VHF BAND, MIXER DIODE, HERMETIC SEALED, GLASS, MICROMELF-2, Microwave Mixer Diode
|
Vishay Semiconductors
|
| BAT15-02V |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Schottky Diodes for Mixer Applications
|
INFINEON TECHNOLOGIES AG
|
| 1N53 |
SILICON MIXER DIODE SILICON, KA BAND, MIXER DIODE, DO-36
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| ADN9001-91 AMM9001-91 ADN3002-23 ADN3002-51 ADN300 |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| BAT19-ARX |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| 1SS86RF |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
|
| MA40414M |
GALLIUM ARSENIDE, KA BAND, MIXER DIODE
|
|
| HSMS-285P-TR1 |
SILICON, ZERO BARRIER SCHOTTKY, HF-C BAND, MIXER DIODE
|
|
| MS8150-P2613 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
MICROSEMI CORP-LOWELL
|
| MSS-20054-T86 MSS-20050-T86 MSS-20051-H27 |
SILICON, ZERO BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE
|
|
| HSCH-9201TC494 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
AGILENT TECHNOLOGIES INC
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
|
